Typical Thermal Characteristics: N & P-Channel
1
0 .5
D = 0.5
0 .2
0 .1
0 .0 5
0.2
0.1
0.05
R θ JA (t) = r(t) * R θ JA
R θ JA = See Note 1c
0 .0 2
0 .0 1
0 .0 0 5
0.02
0.01
Single Pulse
P(pk)
t 1
T J - T A
t 2
= P * R θ JA (t)
0 .0 0 2
Duty Cycle, D = t 1 / t 2
0 .0 0 1
0 .0001
0 .001
0 .0 1
0 .1
1
10
100
300
t 1 , TIME (sec)
Figure 28. Transient Thermal Response Curve .
Note:
Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
depending on the circuit board design.
V DD
t on
t o f f
t d(on)
t r
t d(off)
t f
V IN
R L
90%
90%
V GS
R GEN
G
D
DUT
V OUT
V O U T
10%
10%
90%
S
V IN
10%
50%
PULSE WIDTH
50%
Figure 29. N or P-Channel Switching Test Circuit .
Figure 30. N or P-Channel Switching Waveforms .
NDS9952A.SAM
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相关代理商/技术参数
NDS9952A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO 制造商:Fairchild Semiconductor Corporation 功能描述:DUAL N/P CHANNEL MOSFET, 30V, SOIC
NDS9952A_NL 制造商:Freescale Semiconductor 功能描述:
NDS9952A_Q 功能描述:MOSFET SO-8 N&P-CH ENHANCE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS9952A-CUT TAPE 制造商:FAIRCHILD 功能描述:NDS Series Dual N and P-Channel 30 V 0.08 Ohm Field Effect Transistor -SOIC-8
NDS9953A 功能描述:MOSFET SO-8 P-CH ENHANCE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS9953A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP LOGIC SO-8
NDS9953A_D84Z 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS9955 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube